2SD1187 transistor equivalent, silicon npn power transistor.
*High power switching applications
*DC-DC converter and DC-AC inverter applications
ABSOLUTE MAXIMUM RATINGS(Ta.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min)
*Good Linearity of hFE
*Collector-Emitter Saturation Voltage-
: VCE(sat)= 0.5V(Max.)@ IC= 6.0A
*Minimum Lot-to-Lot variations for robust device
performance and reliable operat.
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