2SD1187 Silicon NPN Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1187 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min). Good Linearity of hFE. Collector-Emitter Saturation Voltage- : VCE(sat)= 0.

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Datasheet Specifications

Part number: 2SD1187
Manufacturer: Inchange Semiconductor
File Size: 199.00 KB
Datasheet: 2SD1187_InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* High power switching applications
* DC-DC converter and DC-AC inverter applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continu

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2SD1187 Silicon NPN Power Transistor Inchange Semiconductor

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