2SD1162 transistor equivalent, silicon npn darlington power transistor.
*Designed for high voltage, low speed switching industrial
use.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER.
*High DC Current Gain-
: hFE= 400(Min.)@IC= 2A
*High Switching Speed
*Low Collector Saturation Voltage
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*Designed for high voltage, lo.
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