2SD1032 transistor equivalent, silicon npn power transistor.
*Designed for AF power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VC.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min)
*Large Collector Power Dissipation
*Complement to Type 2SB812
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*Designed fo.
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