2SD1031 transistor equivalent, npn transistor.
*Designed for power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V(Min)
*Low Collector-Emitter Saturation Voltage-
: VCE(sat) = 2.0V(Max)@ IC= 4A
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device
performance and reliable ope.
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