2SCR542D transistors equivalent, silicon npn power transistors.
*Designed for use in general purpose amplifier and switching
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL.
*DC Current Gain hFE :200-500@ IC= 0.5A
*Collector-Emitter Breakdown Voltage
: V(BR) CEO= 30V(Min)
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*Designed for use in general purpose .
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