Datasheet4U Logo Datasheet4U.com

2SC5265 - Silicon NPN Power Transistor

Description

High Breakdown Voltage-(Vcb=1200V) High Reliability Adoption of MBIT process Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Inverter-controlled Lighting ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SC5265 NPN TRANSISTOR Sanyo Semicon Device
2SC5260 NPN TRANSISTOR Toshiba Semiconductor
2SC5261 NPN TRANSISTOR Toshiba Semiconductor
2SC5261FT NPN TRANSISTOR Toshiba Semiconductor
2SC5262 NPN TRANSISTOR Toshiba Semiconductor

Other Datasheets by Inchange Semiconductor

Part Number Description
2SC5218 Silicon NPN Transistor
2SC5227 Silicon NPN Transistor
2SC5241 Silicon NPN Power Transistors
2SC5252 Silicon NPN Power Transistor
2SC5296 Silicon NPN Power Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage-(Vcb=1200V) · High Reliability ·Adoption of MBIT process ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Inverter-controlled ·Lighting ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1200 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 9 V IC Collector Current- Continuous 4 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 8 A 30 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC5265 isc website：www.iscsemi.
Published: |