isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC4758
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 1.5A
VBE(sat) Base-Emitter Saturation Voltage
IC= 6A; IB= 1.5A
ICBO
Collector Cutoff Current
VCB= 1500V ; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V ; IC= 0
hFE-1
DC Current Gain
IC= 1A ; VCE= 5V
hFE-2
DC Current Gain
IC= 6A ; VCE= 5V
fT
Current-Gain—Bandwidth Product
IC= 0.1A ; VCE= 10V
COB
Output Capacitance
IE=0 ; VCB=10V;ftest=1.0MHz
Switching times, Resistive load
tstg
Storage Time
tf
Fall Time
IC= 6A , IB1= 1.2A ; IB2= -2.4A
RL=32Ω
600
V
5.0
V
1.5
V
1.0 mA
10 μA
8
4
8
1
3
MHz
175
pF
2.5 μs
0.2 μs
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