The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Transistor
2SC4755
Silicon NPN epitaxial planer type
For high speed switching
Unit: mm
2.1±0.1
s Features
q q q
0.425
1.25±0.1
0.425
High-speed switching. Low collector to emitter saturation voltage VCE(sat). S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.
0.65
1
2.0±0.2
1.3±0.1
0.65
3
2
0.9±0.1
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
Symbol VCBO VCES VEBO ICP IC PC Tj Tstg
Ratings 25 20 5 300 200 150 150 –55 ~ +150
Unit V V V mA mA mW ˚C ˚C
0.7±0.1
0 to 0.1
0.2±0.
2SC4755 Datasheet
