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2SC3998 - Silicon NPN Power Transistor

Description

High Switching Speed High Breakdown Voltage- : V(BR)CBO= 1500V(Min) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for horizontal deflection output applications.

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isc Silicon NPN Power Transistor DESCRIPTION ·High Switching Speed ·High Breakdown Voltage- : V(BR)CBO= 1500V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 25 A ICM Collector Current-Pulse PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 50 A 250 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3998 isc website：www.iscsemi.
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