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2SC3998 - Silicon NPN Transistor

Features

  • High speed (tf=100ns typ).
  • High breakdown voltage (VCBO=1500V).
  • High reliability (adoption of HVP process).
  • Adoption of MBIT process. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Electrical Characteristics at Ta=25.

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Full PDF Text Transcription

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Ordering number : EN2732A 2SC3998 SANYO Semiconductors DATA SHEET 2SC3998 NPN Triple Diffused Planar Silicon Transistor Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • High speed (tf=100ns typ). • High breakdown voltage (VCBO=1500V). • High reliability (adoption of HVP process). • Adoption of MBIT process.
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