2SC3871 transistor equivalent, power transistor.
*Designed for high speed switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
.
*Collector-Base Breakdown Voltage-
: V(BR)CBO= 500V(Min.)
*Low Collector Saturation Voltage
*Wide Area of Safe Operation
*High Speed Switching
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
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