q q q q
High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE (TC=25˚C)
Ratings 500 500 400 7 25 15 5 Unit V V V V A A A
26.0±0.5
10.0
1.5
2.0
4.0
1.5
20.0±0.5 2.5
Solder Dip
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C Junc.
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Power Transistors
2SC3874
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
20.0±0.5
Unit: mm
φ 3.3±0.2 5.0±0.3 3.0
6.0
s Features
q q q q
High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE (TC=25˚C)
Ratings 500 500 400 7 25 15 5 Unit V V V V A A A
26.0±0.5
10.0
1.5
2.0
4.0
1.5
20.0±0.5 2.5
Solder Dip
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCES VCEO VEBO ICP IC IB
2.0±0.3 3.0±0.3 1.0±0.2
2.
2SC3874 Datasheet
