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2SC3583 Datasheet, Inchange Semiconductor

2SC3583 transistor equivalent, silicon npn rf transistor.

2SC3583 Avg. rating / M : 1.0 rating-15

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2SC3583 Datasheet

Application


*Designed for low noise amplifier at VHF, UHF and CATV band. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER V.

Description


*Low Noise and High Gain NF = 1.2 dB TYP., Ga = 11 dB TYP. @VCE = 8 V, IC = 7 mA, f = 1.0 GHz
*High Power Gain MAG = 15dB TYP. @VCE = 8V, IC = 20 mA, f = 1.0 GHz
*Minimum Lot-to-Lot variations for robust device performance and reliable op.

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2SC3583 Page 1 2SC3583 Page 2 2SC3583 Page 3

TAGS

2SC3583
Silicon
NPN
Transistor
2SC3580
2SC3581
2SC3582
Inchange Semiconductor

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