2SC3583 - NPN Silicon Transistor

CEL

General Description

UHF band.

achieve a very wide dynamic range and excellent linearity.

Key Features

NF.
Ga 1.2 dB TYP. 13 dB TYP. @f = 1.0 GHz @f = 1.0 GHz.

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2SC3583 npn silicon transistor by CEL - Datasheet Preview

Datasheet Details

Part number	2SC3583
Manufacturer	CEL
File Size	1.70 MB
Description	NPN Silicon Transistor
Datasheet	2SC3583 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DDAATTAA SSHHEEEETT SILICON TRANSISTOR NE68133 / 2SC3583 JEITA Part No. MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR +0.1UT −0.05 1.1PHASEto1.4 0.3 DESCRIPTION The NE68133 / 2SC3583 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band. Low-noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitride passivated base surface process (DNP process) which is a proprietary new fabrication technique. FEATURES • NF • Ga 1.2 dB TYP. 13 dB TYP. @f = 1.0 GHz @f = 1.0 GHz PACKAGE DIMENSIONS (Units: mm) 2.8±0.2 1.5 0.65 +0.1 −0.15 0.4 2 13 +0.1 −0.05 2.9±0.2O 0.95 0.95 0.4 +0.1 −0.06 0.