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2SC2481 - Power Transistor

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) High Current Capability High Collector Power Dissipation Complement to Type 2SA1021 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV vertical deflection o

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC2481 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) ·High Current Capability ·High Collector Power Dissipation ·Complement to Type 2SA1021 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Color TV vertical deflection output applications. ·Color TV class B sound output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 1.5 A IB Base Current-Continuous Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 1.0 A 20 W 1.
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