2SC2408
DESCRIPTION
- Low Noise
NF = 2.4 d B TYP. ;@ f = 200 MHz
- High Gain
︱S21e︱2 = 21 d B TYP. ;@ f = 200 MHz
- Minimum Lot-to-Lot variations for robust device performance and reliable operation.
APPLICATIONS
- Designed for use in high frequency wide band amplifier.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
VCEO Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Collector Current-Continuous
Collector Power Dissipation @TC=25℃
Junction Temperature
150 m A
℃
Tstg
Storage Temperature Range
-65~150
℃ isc website：.iscsemi.cn
1 isc & iscsemi is registered trademark isc Silicon NPN RF Transistor
INCHANGE Semiconductor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS...
