Datasheet4U Logo Datasheet4U.com

2SC1815 - Silicon NPN Power Transistor

Description

High Voltage and High Current Vceo=50V(Min.），Ic=150mA(Max) Excellent hFE Linearity Low Noise Complement to Type 2SA1015(O,Y,GR class) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio frequency general purpose amplifi

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SC1815 Silicon NPN Transistor Toshiba Semiconductor
2SC1815 NPN SILICON TRANSISTOR UTC
2SC1815 SILICON NPN TRANSISTORS Central Semiconductor
2SC1815 NPN Transistor JCET
2SC1815 Silicon Epitaxial Planar Transistor GME

Other Datasheets by Inchange Semiconductor

Part Number Description
2SC1827 Silicon NPN Power Transistors
2SC1870 Silicon NPN Power Transistors
2SC1871A Silicon NPN Power Transistors
2SC1875 Silicon NPN Power Transistors
2SC1881K Silicon NPN Power Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon NPN Transistor INCHANGE Semiconductor 2SC1815 DESCRIPTION ·High Voltage and High Current Vceo=50V(Min.），Ic=150mA(Max) ·Excellent hFE Linearity ·Low Noise ·Complement to Type 2SA1015(O,Y,GR class) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio frequency general purpose amplifier Applications ·Driver stage amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Curren IB Base Curren PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range VALUE UNIT 60 V 50 V 5 V 150 mA 50 mA 400 mW 125 ℃ -55~125 ℃ isc website：www.iscsemi.
Published: |