2SB1412 transistor equivalent, silicon pnp power transistor.
*Power amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO VCEO VEBO
IC I.
*Low collector-to-emitter saturation voltage
: VCE(sat)= -1.0V(Max)@IC= -4A
*Fast switching speed
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*Power ampl.
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