Download 2SB1412 Datasheet PDF
Inchange Semiconductor
2SB1412
2SB1412 is Silicon PNP Power Transistor manufactured by Inchange Semiconductor.
DESCRIPTION - Low collector-to-emitter saturation voltage : VCE(sat)= -1.0V(Max)@IC= -4A - Fast switching speed - 100% avalanche tested - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - Power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC ICM Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Collector Power Dissipation @ Ta=25℃ Collector Power Dissipation @ TC=25℃ Junction Temperature -30 -20 -6 -5 -10 1.0 W ℃ Tstg Storage Temperature...