2SB1100 transistors equivalent, silicon pnp power transistors.
*Designed for audio frequency power amplifier and low
speed high current switching industrial use.
ABSOLUTE MAXIMUM.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -100V(Min)
*High DC Current Gain-
: hFE= 1000(Min)@ IC= -10A
*Complement to Type 2SD1591
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATION.
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