*Designed for low frequency power amplifiers applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VAL.

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min)
*High DC Current Gain- : hFE= 1000(Min)@ (VCE= -3V, IC= -4A)
*Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
*Designed for l.

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