*Designed for power amplification and for TV VM circuit. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE.

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= -180V(Min)
*Good Linearity of hFE
*Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
*Designed for power amplification and for TV VM circ.

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts