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TOSHIBA Transistor Silicon PNP Triple Diffused Type
2SA2142
2SA2142
High-Voltage Switching Applications
Unit: mm
• High breakdown voltage: VCEO = −600 V
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage Collector-emitter voltage Emitter-base voltage
Collector current
Base current Collector power dissipation
DC Pulse
Ta = 25°C Tc = 25°C
VCBO VCEO VEBO
IC ICP IB
Pc
−600
V
−600
V
−7
V
−0.5 A
−1
−0.25
A
1 W
15
Junction temperature Storage temperature range
Tj
150
°C
Tstg
−55 to 150
°C
JEDEC
―
Note1: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.
2SA2142 Datasheet
