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2SA1249 - POWER TRANSISTOR

General Description

High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -160V (Min) Large Current Capacity Complement to Type 2SC3117 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Color TV sound output, converters, inverters.

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isc Silicon PNP Power Transistor 2SA1249 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -160V (Min) ·Large Current Capacity ·Complement to Type 2SC3117 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Color TV sound output, converters, inverters. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -180 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -1.5 A ICM Collector Current-Peak Total Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -2.5 A 1 W 10 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.