Datasheet4U Logo Datasheet4U.com

2SA1242 - Silicon PNP Power Transistor

Description

hFE=100-320(IC= -0.5A; VCE= -2V) hFE=70(Min)(IC= -4A; VCE= -2V) Low Collector-Emitter Saturation Voltage- : VCE(sat)= -1.0V(Max)( IC= -4A; IB= -0.1A) High Power Dissipation- : PC= 10W@TC=25℃,PC= 10W@Ta=25℃ Minimum Lot-to-Lot variations for robust device performance and

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SA1242 Silicon PNP Transistor Toshiba Semiconductor
2SA1242 Silicon PNP transistor BLUE ROCKET ELECTRONICS
2SA1242 PNP Transistor JCET
2SA1242 PNP Transistor LGE
2SA1241 Silicon PNP Transistor Toshiba Semiconductor

Other Datasheets by Inchange Semiconductor

Part Number Description
2SA1249 POWER TRANSISTOR
2SA1205 POWER TRANSISTOR
2SA1209 POWER TRANSISTOR
2SA1214 Silicon PNP Power Transistor
2SA1215 POWER TRANSISTOR

Full PDF Text Transcription

Click to expand full text
isc Silicon PNP Power Transistor DESCRIPTION ·hFE=100-320(IC= -0.5A; VCE= -2V) ·hFE=70(Min)(IC= -4A; VCE= -2V) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= -1.0V(Max)( IC= -4A; IB= -0.1A) ··High Power Dissipation- : PC= 10W@TC=25℃,PC= 10W@Ta=25℃ ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For medium power amplifier and strobe flash applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -35 V VCEO Collector-Emitter Voltage -20 V VEBO Emitter-Base Voltage -8 V IC Collector Current-Continuous -5 A ICM Collector Current-Peak -8 A IB Base Current Collector Power Dissipation PC @ TC=25℃ Collector Power Dissipation @Ta=25℃ TJ Junction Temperature -0.
Published: |