2SA1225
DESCRIPTION
- High transition frequency
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
- plementary to 2SC2983
APPLICATIONS
- Power amplifier applications
- Driver stage amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-160
VCEO Collector-Emitter Voltage
-160
VEBO
Emitter-Base Voltage
-5
Collector Current-Continuous
-1.5
Total Power Dissipation @ TC=25℃
Junction Temperature
℃
Tstg
Storage Temperature Range
-55~150 ℃ isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise...
