2SA1180 transistor equivalent, power transistor.
*Designed for power switching amplifier and general purpose
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -150V(Min.)
*High Power Dissipation
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*Designed for power switching amplifier and genera.
Image gallery
TAGS
Download (Size : 207.44KB)