2SA1185 transistor equivalent, power transistor.
*Designed for high power audio frequency amplifier
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
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PARAMETER.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -50V(Min.)
*Low Collector-Emitter Saturation Voltage-
: VCE(sat)= -0.8V(Max.)@ IC= -7A
*Good Linearity of hFE
*Large Collector Current
*Minimum Lot-to-Lot variations for robust dev.
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