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2SA1185 - POWER TRANSISTOR

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min.) Low Collector-Emitter Saturation Voltage- : VCE(sat)= -0.8V(Max.)@ IC= -7A Good Linearity of hFE Large Collector Current Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATION

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isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min.) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= -0.8V(Max.)@ IC= -7A ·Good Linearity of hFE ·Large Collector Current ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power audio frequency amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -7 A ICM Collector Current-Peak -15 A IBM Base Current-Peak Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta =25℃ TJ Junction Temperature -5 A 60 W 2.
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