Datasheet Details
| Part number | 2SA1060 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.70 KB |
| Description | POWER TRANSISTOR |
| Download | 2SA1060 Download (PDF) |
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| Part number | 2SA1060 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.70 KB |
| Description | POWER TRANSISTOR |
| Download | 2SA1060 Download (PDF) |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·High Power Dissipation ·Complement to Type 2SC2484 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power audio frequency amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -5 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -8 A 60 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA1060 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA ;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -3A;
IB= -0.3A VBE(on) Base-Emitter On Voltage IC= -3A ;
isc Silicon PNP Power Transistor 2SA1060.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SA1060 | Transistor | Panasonic Semiconductor |
 |
2SA1060 | Silicon POwer Transistors | SavantIC |
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| 2SA1064 | POWER TRANSISTOR |
| 2SA1065 | POWER TRANSISTOR |
| 2SA1067 | POWER TRANSISTOR |
| 2SA1068 | POWER TRANSISTOR |
| 2SA1069 | POWER TRANSISTOR |
| 2SA1069-Z | Silicon PNP Power Transistor |
| 2SA1069A | POWER TRANSISTOR |
| 2SA1069A-Z | Silicon PNP Power Transistor |