3DD5E transistor equivalent, silicon npn power transistor.
*Designed for general purpose switching and amplifier
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
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PARAME.
*Excellent safe operating area
*Low Collector-Emitter Saturation Voltage
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*Designed for general purpose switching and amplifier
applicati.
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