2SC2026 transistor equivalent, silicon npn rf transistor.
*Designed for use in low noise amplifiers in the VHF~UHF
band.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
.
*Low Noise
NF= 3.0dB TYP. @ f= 500MHz
*High Power Gain
Gpe= 15dB TYP. @ f= 500MHz
*High Gain Bandwidth Product
fT= 2.0GHz TYP.
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device
performance and reliable operat.
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