| Description | Preliminary Data Sheet ICE20N65FP ICE20N65FP N-Channel Enhancement Mode MOSFET Features • Low rDS(on) • Ultra Low Gate Charge • High dv/dt capability • High Unclamped Inductive Switching (UIS) capability • High peak current capability • Increased transconductance performance • Optimized design for high performance power systems HALOGEN Product Summary ID rDS(on) FREE TA=25oC VGS=10V VDS=480V D ... |
| Features |
• Low rDS(on) • Ultra Low Gate Charge • High dv/dt capability • High Unclamped Inductive Switching (UIS) capability • High peak current capability • Increased transconductance performance • Optimized design for high performance power systems HALOGEN Product Summary ID rDS(on) FREE TA=25oC VGS=10V VDS=480V D 20A 700V 0.17Ω 82nC Max Min Typ Typ ... |
| Datasheet |
 ICE20N65FP Datasheet - 725.46KB |
