ICE20N170B mosfet equivalent, n-channel mosfet.
r Low DS(on)
Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability High Peak Current Capability Increased Transconduc.
TO-263
G
Maximum Ratings @ Tj = 25°C, Unless Otherwise Specified
Symbol Parameter
Value
Unit Conditions
ID
ID, pulse EAS IAR
dv/dt
Continous Drain Current
Pulsed Drain Current Avalanche Energy, Single Pulse Avalanche Current, Repetitive MOSF.
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