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IXUC100N055 - 55V Trench Power MOSFET

Key Features

  • Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation l Trench MOSFET - very low RDS(on) - fast switching - usable intrinsic reverse diode l Low drain to tab capacitance(.

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Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXUC120N10 Trench Power MOSFET ISOPLUS220
IXUC160N075 Trench Power MOSFET
IXUC200N055 Trench Power MOSFET ISOPLUS220

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet.co.kr ADVANCED TECHNICAL INFORMATION Trench Power MOSFET ISOPLUS220TM Electrically Isolated Back Surface IXUC100N055 VDSS = 55 V ID25 = 100 A RDS(on) = 7.7 mW ISOPLUS 220TM Symbol VDSS VGS ID25 ID90 IS25 IS90 ID(RMS) EAS PD TJ TJM Tstg TL VISOL FC Weight 1.6 mm (0.062 in.) from case for 10 s RMS leads-to-tab, 50/60 Hz, t = 1 minute Mounting force with clips Test Conditions TJ = 25°C to 150°C Continuous TC = 25°C; Note 1 TC = 90°C, Note 1 TC = 25°C; Note 1, 2 TC = 90°C, Note 1, 2 Package lead current limit TC = 25°C TC = 25°C Maximum Ratings 55 ±20 100 80 100 70 45 500 150 -55 ... +175 175 -55 ... +150 300 2500 11 ... 65 / 2.4 ...