IXTP1R6N50D2, IXTY1R6N50D2 Datasheet - IXYS Corporation

IXTP1R6N50D2 N-Channel MOSFET

Depletion Mode MOSFET N-Channel IXTY1R6N50D2 IXTA1R6N50D2 IXTP1R6N50D2 D G S Symbol VDSX VGSX VGSM PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C Continuous Transient TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque (TO-220) TO-252 TO-263 TO-220 Maximum Ratings 500 V 20 V 30 V 100 W - 55 +150 C 150 C - 55 +150 C 300 °C 260 °C 1.13 / 10 Nm/lb.in. 0.35 g 2.50 g 3.00 g Symbol Test Condi.

IXTP1R6N50D2 Features

* Normally ON Mode

*  International Standard Packages

* Molding Epoxies Meet UL 94 V-0 Flammability Classification Advantages

* Easy to Mount

* Space Savings

* High Power Density Applications

* Audio Amplifiers

* Start-up Circuits

IXTY1R6N50D2_IXYSCorporation.pdf

IXTP1R6N50D2 Datasheet Preview — This datasheet PDF includes multiple part numbers: IXTP1R6N50D2, IXTY1R6N50D2. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

IXTP1R6N50D2, IXTY1R6N50D2

Manufacturer:

IXYS Corporation

File Size:

348.50 KB

Description:

N-channel mosfet.

Note:

This datasheet PDF includes multiple part numbers: IXTP1R6N50D2, IXTY1R6N50D2.
Please refer to the document for exact specifications by model.

📁 Related Datasheet

IXTP1R6N50P Power MOSFET (IXYS)

IXTP1R6N50P N-Channel MOSFET (INCHANGE)

IXTP1R6N100D2 N-Channel MOSFET (IXYS Corporation)

IXTP1R4N100P Power MOSFET (IXYS)

IXTP1R4N100P N-Channel MOSFET (INCHANGE)

IXTP1R4N120P Power MOSFET (IXYS)

IXTP1R4N60P Power MOSFET (IXYS)

IXTP1R4N60P N-Channel MOSFET (INCHANGE)

TAGS

IXTP1R6N50D2 IXTY1R6N50D2 N-Channel MOSFET IXYS Corporation

IXTP1R6N50D2 Distributor