IXTP1R4N100P, IXTY1R4N100P Datasheet - IXYS

IXTP1R4N100P Power MOSFET

PolarTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated IXTY1R4N100P IXTA1R4N100P IXTP1R4N100P VDSS ID25 RDS(on) = 1000V = 1.4A ≤ 11.8Ω TO-252 (IXTY) G Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Ratings 1000 1000 ±20 ±30 1.4 3.0 1.4 1.

IXTP1R4N100P Features

* z z z z z S D (Tab) TO-263 AA (IXTA) G S D (Tab) TO-220AB (IXTP) G DS D (Tab) 1.6mm (0.062) from Case for 10s Plastic Body for 10s Mounting Force TO-252 TO-263 TO-220 (TO-263) Mounting Torque (TO-220) 300 260 10..65/2.2..14.6 1.13 / 10 0.35 2.50 3.00 G = Gate S = Source D = Drain Tab = Dr

IXTY1R4N100P-IXYS.pdf