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IXTA2N80 - High Voltage MOSFET

Download the IXTA2N80 datasheet PDF. This datasheet also covers the IXTP2N80 variant, as both devices belong to the same high voltage mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • Maximum lead temperature for soldering Ÿ International standard packages Ÿ Low RDS (on).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTP2N80_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IXTA2N80 N-Channel MOSFET INCHANGE
IXTA2N80P N-Channel MOSFET INCHANGE
IXTA2N80P Power MOSFET IXYS
IXTA2N100 N-Channel MOSFET INCHANGE
IXTA2N100P Power MOSFET IXYS

Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXTA2N100 High Voltage MOSFET
IXTA200N075T7 Power MOSFET
IXTA200N085T7 Power MOSFET
IXTA220N055T7 Power MOSFET
IXTA220N075T Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Advanced Technical Information High Voltage MOSFET N-Channel Enhancement Mode Avalanche Energy Rated IXTA 2N80 IXTP 2N80 VDSS ID25 RDS(on) = 800 V = 2 A = 6.2 Ω Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM Maximum Ratings 800 800 ±20 ±30 2 8 2 V V V V A A A mJ mJ V/ns W °C °C °C Nm/lb.in. 4 300 g °C TO-220AB (IXTP) GD S D (TAB) TO-263 AA (IXTA) TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 18 Ω TC = 25°C 6 200 5 54 -55 ... +150 150 -55 ... +150 G S D (TAB) G = Gate, S = Source, D = Drain, TAB = Drain Mounting torque 1.