Datasheet4U Logo Datasheet4U.com

IXTA2N80P - Power MOSFET

Download the IXTA2N80P datasheet PDF. This datasheet also covers the IXTU2N80P variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • International Standard Packages.
  • Low QG.
  • Avalanche Rated.
  • Low Package Inductance.
  • Fast Intrinsic Rectifier Advantages.
  • High Power Density.
  • Easy to Mount.
  • Space Savings BVDSS VGS = 0V, ID = 250μA 800 V.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTU2N80P-IXYS.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IXTA2N80P N-Channel MOSFET INCHANGE
IXTA2N80 High Voltage MOSFET IXYS Corporation
IXTA2N80 N-Channel MOSFET INCHANGE
IXTA2N100 High Voltage MOSFET IXYS Corporation
IXTA2N100 N-Channel MOSFET INCHANGE

Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXTA2N100P Power MOSFET
IXTA200N055T2 Power MOSFET
IXTA200N055T2-7 Power MOSFET
IXTA200N075T Power MOSFET
IXTA200N085T Power MOSFET

Full PDF Text Transcription

Click to expand full text
PolarTM Power MOSFET IXTU2N80P IXTY2N80P IXTA2N80P VDSS = ID25 =  RDS(on) 800V 2A 6 N-Channel Enhancement Mode IXTP2N80P TO-251 (IXTU) Avalanche Rated G D Symbol E VDSS VDGR VGSS T VGSM ID25 IDM E IA EAS dv/dt L PD TJ TJM O Tstg TL TSOLD FC S Md B Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 800 V 800 V 30 V 40 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C 2 4 2 100 5 70 -55 ... +150 150 -55 ... +150 A A A mJ V/ns W C C C Maximum Lead Temperature for Soldering 300 °C 1.6 mm (0.062in.) from Case for 10s 260 °C Mounting Force (TO-263 & TO-251) 10..65 / 2.2..14.6 Mounting Torque (TO-220) 1.13 / 10 N/lb Nm/lb.
Published: |