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IXSH30N60 - Low VCE(sat) IGBT

Download the IXSH30N60 datasheet PDF. This datasheet also covers the IXSM30N60 variant, as both devices belong to the same low vce(sat) igbt family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • l l Mounting torque 1.13/10 Nm/lb. in. TO-204 = 18 g, TO-247 = 6 g 300 °C Maximum lead temperature for soldering 1.6 mm (0.062 in. ) from case for 10 s l l l Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 5 TJ = 25°C TJ = 125°C 8 100 1 ±100 30N60 30N60A 2.5 3.0 V V µA mA nA V V l International standard packages Guaranteed Short Circuit SOA capability Low VCE(sat) - for low on-state conduction losses High current handling capability.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXSM30N60_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXSH30N60A Low VCE(sat) IGBT
IXSH30N60B High Speed IGBT
IXSH30N60BD1 High Speed IGBT
IXSH30N60C High Speed IGBT
IXSH30N60CD1 Short Circuit SOA Capability

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Low VCE(sat) IGBT High Speed IGBT Short Circuit SOA Capability VCES IXSH/IXSM IXSH/IXSM 30N60 30N60A 600 V 600 V IC25 50 A 50 A VCE(sat) 2.5 V 3.0 V www.DataSheet4U.com Symbol VCES Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TJ = 125°C, RG = 4.7 Ω Clamped inductive load, L = 100 µH VGE = 15 V, VCE = 360 V, TJ = 125°C RG = 33 Ω, non repetitive TC = 25°C Maximum Ratings 600 600 ±20 ±30 50 30 100 ICM = 60 @ 0.8 VCES 10 200 -55 ... +150 150 -55 ...