IXGN50N60BD3, IXGN50N60BD2 Datasheet - IXYS Corporation

IXGN50N60BD3 HiPerFAST IGBT

HiPerFASTTM IGBT with HiPerFRED Buck & boost configurations IXGN 50N60BD2 IXGN 50N60BD3 VCES IC25 VCE(sat) tfi = 600 V = 75 A = 2.5 V = 150 ns BD2 www.DataSheet4U.com Symbol BD3 Maximum Ratings 600 600 ±20 ±30 75 50 200 ICM = 100 @ 0.8 VCES 250 600 60 600 150 -40 +150 150 -40 +150 V V V V 4 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms SOT-227B, miniBLOC E 153432 2 1 VCES VCGR VGES VGEM IGBT IC25 IC90 ICM A .

IXGN50N60BD3 Features

* International standard package miniBLOC

* Aluminium nitride isolation - high power dissipation

* Isolation voltage 3000 V~

* Very high current, fast switching IGBT & FRED diode

* MOS Gate turn-on - drive simplicity

* Low collector-to-case capacitance

IXGN50N60BD2_IXYSCorporation.pdf