IXGH72N60A3 igbt equivalent, genx3 600v igbt.
z z z
Optimized for low conduction losses Square RBSOA International standard packages
Advantages
z z
High power density Low gate drive requirement
Applications
Symb.
Symbol Test Conditions (TJ = 25°C unless otherwise specified)
BVCES VGE(th) ICES IGES VCE(sat) IC = 250μA, VGE = 0V IC .
Image gallery
TAGS
Manufacturer
Related datasheet