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IXGH35N120C - IGBT Lightspeed Series

Key Features

  • G = Gate, E = Emitter, Maximum Lead temperature for soldering 1.6 mm (0.062 in. ) from case for 10 s Maximum Tab temperature for soldering SMD devices for 10 s Md Weight Mounting torque (M3) 1.13/10 Nm/lb. in. TO-247 AD TO-268 6 4 g g.
  • International standard packages JEDEC TO-268 surface and JEDEC TO-247 AD.
  • Low switching losses.
  • MOS Gate turn-on - drive simplicity.

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Advance Technical Information IGBT Lightspeed Series IXGH 35N120C IXGT 35N120C VCES = 1200 V = 70 A IC25 VCE(sat) = 4.0 V tfi(typ) = 115 ns Symbol www.DataSheet4U.com V CES Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 5 W Clamped inductive load TC = 25°C Maximum Ratings 1200 1200 ±20 ±30 70 35 140 ICM = 90 @ 0.8 VCES 300 -55 ... +150 150 -55 ... +150 300 260 V V V V A A A A TO-268 (IXGT) G E (TAB) VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg TO-247 AD (IXGH) G C (TAB) C E C = Collector, TAB = Collector W °C °C °C °C °C Features G = Gate, E = Emitter, Maximum Lead temperature for soldering 1.6 mm (0.062 in.