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IXGH30N60C3C1 - High-Speed PT IGBT

Download the IXGH30N60C3C1 datasheet PDF. This datasheet also covers the IXGA30N60C3C1 variant, as both devices belong to the same high-speed pt igbt family and are provided as variant models within a single manufacturer datasheet.

Features

  • Optimized for Low Switching Losses Square RBSOA Anti-Parallel Schottky Diode International Standard Packages Advantages High Power Density Low Gate Drive Requirement.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXGA30N60C3C1_IXYS.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IXGH30N60C3 GenX3 600V IGBT IXYS Corporation
IXGH30N60 Low VCE(sat) IGBT IXYS Corporation
IXGH30N60A Low VCE(sat) IGBT IXYS Corporation
IXGH30N60B HiPerFASTTM IGBT IXYS Corporation
IXGH30N60B2 HiPerFAST IGBT IXYS Corporation

Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXGH30N60C2 HiPerFAST IGBT
IXGH30N60C2D1 HiPerFAST IGBT
IXGH30N60B2D1 IGBT
IXGH32N120A3 Ultra-Low Vsat PT IGBT
IXGH32N170A High Voltage IGBT

Full PDF Text Transcription

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GenX3TM 600V IGBTs w/ SiC Anti-Parallel Diode High-Speed PT IGBTs for 40 - 100kHz Switching IXGA30N60C3C1* IXGP30N60C3C1 IXGH30N60C3C1 *Obsolete Part Number Symbol Test Conditions VCES VCGR VGES VGEM TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient IC25 IC110 IF110 ICM SSOA (RBSOA) TC = 25°C TC = 110°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 5Ω Clamped Inductive Load PC TJ TJM Tstg TL TSOLD Md Weight TC = 25°C 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10 seconds Mounting Torque (TO-220 & TO-247) TO-263 TO-220 TO-247 Maximum Ratings 600 V 600 V ± 20 V ± 30 V 60 A 30 A 13 A 150 A ICM = 60 A @ ≤ VCES 220 W -55 ... +150 °C 150 °C -55 ... +150 °C 300 260 1.13/10 2.5 3.0 6.0 °C °C Nm/lb.in.
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