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IXGH31N60 - Ultra-Low VCE(sat) IGBT

Key Features

  • International standard package.
  • Low VCE(sat) - for minimum on-state conduction losses.
  • High current handling capability.
  • MOS Gate turn-on - drive simplicity.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ultra-Low VCE(sat) IGBT IXGH 31N60 IXGT 31N60 VCES IC25 VCE(sat) = 600 V = 60 A = 1.7 V Symbol www.DataSheet4U.com VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Md Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 10 W Clamped inductive load, L = 100 mH TC = 25°C Maximum Ratings 600 600 ±20 ±30 60 31 80 ICM = 62 @ 0.8 VCES 150 -55 ... +150 150 -55 ... +150 V V V V A A A A W °C °C °C °C g g TO-247 AD G C E (TAB) TO-268 G E (TAB) G = Gate, E = Emitter, C = Collector, TAB = Collector Mounting torque (M3) TO-247 1.13/10 Nm/lb.in.