IXFR48N50Q mosfet equivalent, power mosfet.
l Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation l Low drain to tab capacitance(<30pF)
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l DC-DC converters
l l l l
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Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. .
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