IXFN48N55 mosfet equivalent, power mosfet.
* International standard package
* miniBLOC, with Aluminium nitride
isolation
* Low RDS (on) HDMOSTM process
* Rugged polysilicon gate cell structure
Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 550 2.5 4.5 ±100 TJ .
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