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IXFN48N50U2

IXFN48N50U2 is HiPerFET Power MOSFETs manufactured by IXYS.
IXFN48N50U2 datasheet preview

IXFN48N50U2 Datasheet

Part number IXFN48N50U2
Download IXFN48N50U2 Datasheet (PDF)
File Size 176.03 KB
Manufacturer IXYS
Description HiPerFET Power MOSFETs
IXFN48N50U2 page 2 IXFN48N50U2 page 3

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IXFN48N50U2 Description

RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by max. rectangular, d = 0.5 tp <10 ms; pulse width limited by TJ TC = 25°C 60 800 180 -40 ...

IXFN48N50U2 Key Features

  • Popular Buck & Boost circuit topologies
  • International standard package miniBLOC SOT-227B
  • Aluminium nitride isolation
  • high power dissipation
  • Isolation voltage 3000 V~
  • Low RDS (on) HDMOSTM process
  • Rugged polysilicon gate cell structure
  • Low drain-to-case capacitance (<60 pF)
  • reduced RFI
  • Ultra-fast FRED diode with soft reverse recovery

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