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IXFN30N110P Datasheet IXYS Corporation

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File Size : 126.61KB · IXFN30N110P Avg. rating / M : star-14

Features and Benefits


• International standard package
• Encapsulating epoxy meets G = Gate S = Source D D = Drain S S G Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC =.

IXFN30N110P IXFN30N110P IXFN30N110P
TAGS
Polar
Power
MOSFET
HiPerFET
IXFN30N110P
IXFN30N120P
IXFN300N10P

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