• Part: IXFN300N10P
  • Manufacturer: IXYS
  • Size: 128.42 KB
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IXYS datasheets

IXFN300N10P Description

PolarTM HiPerFETTM Power MOSFET IXFN300N10P N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS dv/dt PD TJ TJM Tstg TL VISOL M d Weight Test Conditions TJ = 25C to 175C TJ = 25C to 175C, RGS.

IXFN300N10P Key Features

  • International Standard Package
  • miniBLOC, with Aluminium Nitride
  • Low RDS(on) and QG
  • Avalanche Rated
  • Low Package Inductance
  • Fast Intrinsic Rectifier
  • High Power Density
  • Easy to Mount
  • Space Savings