Overview: PolarTM HiPerFETTM Power MOSFET IXFN300N10P N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS dv/dt PD TJ TJM Tstg TL VISOL
M d
Weight Test Conditions TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M Continuous
Transient
TC = 25C External Lead Current Limit TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C
IS IDM, VDD VDSS, TJ 175C TC = 25C 1.6mm (0.062 in.) from Case for 10s 50/60 Hz, RMS IISOL 1mA
Mounting Torque Terminal Connection Torque t = 1min t = 1s Maximum Ratings 100 V 100 V 20 V 30 V 295 A 200 A 900 A 100 A 3 J 20 1070 -55 ... +175 175 -55 ... +175 300 V/ns W C C C C 2500 3000
1.5/13 1.3/11.5 V~ V~
Nm/lb.in Nm/lb.in 30 g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 3mA VGS(th) VDS = VGS, ID = 8mA IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 150C RDS(on) VGS = 10V, ID = 50A, Note 1 Characteristic Values Min. Typ. Max. 100 V 2.5 5.0 V 200 nA 25A 1.5 mA 5.5 m VDSS = 100V ID25 = 295A RDS(on) 5.
