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IXFN300N10P - Power MOSFET

Key Features

  • International Standard Package.
  • miniBLOC, with Aluminium Nitride Isolation.
  • Low RDS(on) and QG.
  • Avalanche Rated.
  • Low Package Inductance.
  • Fast Intrinsic Rectifier Advantages.
  • High Power Density.
  • Easy to Mount.
  • Space Savings.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PolarTM HiPerFETTM Power MOSFET IXFN300N10P N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS dv/dt PD TJ TJM Tstg TL VISOL M d Weight Test Conditions TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M Continuous Transient TC = 25C External Lead Current Limit TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  175C TC = 25C 1.6mm (0.062 in.) from Case for 10s 50/60 Hz, RMS IISOL  1mA Mounting Torque Terminal Connection Torque t = 1min t = 1s Maximum Ratings 100 V 100 V 20 V  30 V 295 A 200 A 900 A 100 A 3 J 20 1070 -55 ... +175 175 -55 ... +175 300 V/ns W C C C C 2500 3000 1.5/13 1.3/11.5 V~ V~ Nm/lb.in Nm/lb.