z D = Drain z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low drain to tab capacitan.

z z z Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 500 2 4 ± 1.

IXFC110N10P

IXFC12N80P

IXFC14N60P

IXFC14N80P

IXFC15N80Q

IXFC16N50P

IXFC16N80P

IXFC20N80P

IXFC24N50

IXFC26N50

IXFC26N50P

IXFC30N60P

IXFC36N50P

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts