*
*
*
* Fast intrinsic diode Avalanche Rated Low RDS(ON) and QG Low package inductance G D (TAB) S G = Gate S = Source D = Drain TAB = Drain Advantage.

Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3mA VDS = .

IXFB30N120P

IXFB38N100Q2

IXFB100N50P

IXFB100N50Q3

IXFB110N60P3

IXFB120N50P2

IXFB132N50P3

IXFB150N65X2

IXFB170N30P

IXFB44N100P

IXFB50N80Q2

IXFB52N90P

IXFB60N80P

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